Resonant Tunneling in an STM and its Negative Resistance.

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature

GaN/AlN resonant tunneling diodes RTD were grown by metal-organic chemical vapor deposition MOCVD and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs’ performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negat...

متن کامل

Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures

We report a systematical study of the temperature-dependence of negative deferential resistance (NDR) from double-barrier Al0.35Ga0.65N/GaN resonant tunneling diodes grown by plasma-assisted molecular-beam epitaxy on free-standing GaN substrates. The current–voltage (I–V) characterization was done in the 6–300 K temperature range. A clear NDR signature was observed for mesa sizes of 4 × 4 μm2 a...

متن کامل

Reliable GaN-based Resonant Tunneling Diodes with Reproducible Room-temperature Negative Differential Resistance

Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have wide bandgap, high carrier mobility an...

متن کامل

A New Triple-Well Resonant Tunneling Diode with Controllable Double-Negative Resistance

A newly structured triple-well resonant tunneling diode (RTD) is proposed as a triple-valued logic device. The superiority of this new RTD for triple-valued logic application i s demonstrated with numerical simulation based on the transfer matrix method. This new RTD exhibits significant double-negative differential resistance, and the two current peak voltages are independently controlled with...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: SHINKU

سال: 1993

ISSN: 0559-8516,1880-9413

DOI: 10.3131/jvsj.36.877